High-Temperature High-Power Operation of a 100 A SiC DMOSFET Module

摘要

The development of Silicon-Carbide (SiC) power electronic devices having high operating temperatures, high breakdown voltages and low losses has been widely researched over the past few decades. While devices such as the SiC junction barrier Schottky (JBS) rectifier are becoming available in the commercial marketplace, the SiC DMOSFET is less mature. Although continued research on material processing and device-level structures is necessary for optimization, new high performance 50 A SiC DMOSFETs have been fabricated. These MOSFETs have been identified as candidates to replace Si IGBTs in high-current high-temperature power modules for large hybrid electric vehicle propulsion systems. This paper reports on the performance of a 100 A SiC module comprised of two 50 A DMOSFETs. Experimental results are presented for the module in a DC-DC boost converter operated with external 75 A SiC JBS diodes at 17 kW output while using 90 ?°C liquid coolant.