首页> 外文会议>応用物理学会春季学術講演会;応用物理学会 >Temperature dependence of spin signals in an AlGaAs/GaAs-basedhigh-mobility two-dimensional electron system
【24h】

Temperature dependence of spin signals in an AlGaAs/GaAs-basedhigh-mobility two-dimensional electron system

机译:基于AlGaAs / GaAs的高迁移率二维电子系统中自旋信号的温度依赖性

获取原文

摘要

The injection of spin-polarized electrons from ferromagnets into semiconductors has attracted much interest for creating spin transistors. Spin injection into bulk semiconductors such as GaAs [1], Si [2], and Ge [3] has been realized at room temperature. On the other hand, a two-dimensional electron gas (2DEG) structure of AlGaAs/GaAs has attracted much interest for its high electron mobility, and it is used for high electron mobility transistors (HEMTs).
机译:从铁磁体向半导体中注入自旋极化电子已引起人们对创建自旋晶体管的极大兴趣。在室温下已实现了自旋注入到GaAs [1],Si [2]和Ge [3]等体半导体中。另一方面,AlGaAs / GaAs的二维电子气(2DEG)结构因其高电子迁移率引起了人们的极大兴趣,并被用于高电子迁移率晶体管(HEMT)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号