Temperature dependence of spin signals in an AlGaAs/GaAs-basedhigh-mobility two-dimensional electron system

摘要

The injection of spin-polarized electrons from ferromagnets into semiconductors has attracted much interest for creating spin transistors. Spin injection into bulk semiconductors such as GaAs [1], Si [2], and Ge [3] has been realized at room temperature. On the other hand, a two-dimensional electron gas (2DEG) structure of AlGaAs/GaAs has attracted much interest for its high electron mobility, and it is used for high electron mobility transistors (HEMTs).