First Direct Synthesis of Graphene/Half-metallic Heusler Alloy Heterostructure forSpintronic Device Applications

摘要

The low spin signal and tiny magneto-resistance is becoming a central issue in graphene-spintronicdevices [1] in which conventional ferromagnets (FMs) such as Ni, Co, Fe of low spin polarization wereused. Adopting highly spin-polarized material such as half-metal into graphene/FM heterostructure can bethe most effective way to enhance the performance of graphene-spintronics device, experimentaldemonstration, however, is still lacking. This study, for the first time, reports a new heterostructureconsisting of a single layer graphene (SLG) synthesized by high-vacuum chemical vapor deposition (CVD)on Co2FeGe0.5Ga0.5 (CFGG) Heusler alloy whose half-metallicity has been confirmed experimentally [2].