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Spin-orbit torque switching and thermal stability of nanoscale Co/Pt multilayersover a wide range of temperature

机译:宽温度范围内纳米级Co / Pt多层膜的自旋轨道转矩切换和热稳定性

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Spintronics memory devices utilizing spin-orbit torques (SOTs) [1-3] are promising for ultralow-power and high-performance integrated circuits. To use SOT devices for versatile applications, including automobile and aerospace, they need to ensure wide-temperature operations in nanoscale dimensions. Thus, it is important to understand temperature dependence of the device performance. We have been studying SOT devices with Co/Pt multilayers having high anisotropy and shown SOT-induced magnetization switching in micrometer-scale Hall-bar devices [4]. In this work, we study the temperature dependence of switching characteristics and thermal stability in nanoscale SOT devices with Co/Pt multilayers and discuss the feasibility of Co/Pt multilayers for those applications that require wide-temperature operations.
机译:利用自旋轨道转矩(SOT)[1-3]的自旋电子存储设备有望用于超低功耗和高性能集成电路。为了将SOT器件用于包括汽车和航空航天在内的多种应用,他们需要确保在纳米级的宽温度下运行。因此,重要的是要了解器件性能的温度依赖性。我们一直在研究具有高各向异性的Co / Pt多层膜的SOT器件,并在微米级霍尔棒器件中显示了SOT诱导的磁化转换[4]。在这项工作中,我们研究了具有Co / Pt多层的纳米级SOT器件中开关特性和热稳定性的温度依赖性,并讨论了Co / Pt多层在需要宽温度操作的应用中的可行性。

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