CFD simulation study of the gas flow balance in a vertical HVPE reactor with gas mixing block for low cost bulk GaN crystal growth

摘要

GaN has been widely applied in various industries recent years. However, there are still several immature research fields waiting to be improved, and growth of high quality, low cost GaN substrate is one of them. We chose Halide Vapor Phase Epitaxy (HVPE) as the method to grow high quality, low cost bulk GaN crystal because of its high growth rate.