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Highly ReliableLow Temperature (180℃) Solution Processed Passivationfor AmorphousSolution ProcessedIn-Zn-O Thin-Film Transistors

机译:可靠的低温(180℃)溶液钝化处理,用于非晶溶液In-Zn-O薄膜晶体管的钝化处理

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Recently,amorphousoxidesemiconductors(AOS) havebeen widely studied due to theirremarkable propertieswhich arehigh electrical characteristics,low fabrication temperature, andlarge area deposition1). However,unpassivated AOSthin film transistors (TFTs)showdegradationinimportantparametersincluding the threshold voltage (Vth), subthreshold swing (SS), and off current (Iof)whenexposed tohumid condition2). In this study,the organic–inorganic hybridpolysilsesquioxane (PSQ)passivation was used as the passivation layertoprotectAOS TFTsfrom degradation. Theseorganic–inorganic hybrid passivation materials are composed ofaSiO polymer backbone withmethyl and phenyl as the alkyl groups. Ithas beendemonstrated as an effective passivation material forAOSTFTsattemperaturesas low as180 ̊C3).In this work, we investigate the reliability of amorphous indium zinc oxide (a-IZO) TFTspassivated with low temperature (180 °C) PSQagainstpositive bias stress (Vgs=+20V), negative bias stress (Vgs=-20V),and additional humidity stress test at relative humidity of 98%and temperature of30℃for2h(Vgs=Vds=0V).
机译:近年来,无定形氧化物半导体(AOS)由于其具有高电学特性,低制造温度和大面积沉积的显着特性而得到了广泛的研究1)。但是,未经钝化的AOS薄膜晶体管(TFT)在暴露于潮湿条件下时,在重要的参数(包括阈值电压(Vth),亚阈值摆幅(SS)和截止电流(Iof))中都会出现退化2)。在这项研究中,有机-无机杂化倍半硅氧烷(PSQ)钝化层被用作保护AOS TFT免受降解的钝化层。这些有机-无机杂化钝化材料由以甲基和苯基为烷基的SiO2聚合物主链组成。它已被证明是在低至180°C3的温度下对AOSTFTs有效的钝化材料。负偏压(Vgs = -20V),并在98%的相对湿度和30℃的温度下进行2h的附加湿度应力测试(Vgs = Vds = 0V)。

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