Analysis of potential induced degradation at the micro-cracked regions for p-type crystalline Si solar cells using microwave photoconductance decay technique

摘要

In this report, potential induced degradation (PID) that has occurred at the micro-cracked regions of p-type crystalline silicon solar cells was detected by electroluminescence (EL) and lock-in thermal (LIT) techniques as shown in Fig.1. The “×” symbol-like micro-cracked region as the dark region of EL image corresponding to the hot-spot region of LIT image has been severely affected after a PID stress test for 100 hours. Their local electrical deterioration at the micro-cracked region was analyzed and evaluated by normalized electrical characteristics extracted from one-sun-illuminated current density-voltage (J-V) curves before and after PID stress tests as shown in Fig.