Low-temperature fabrication of Ge MOS capacitors for spintronics and flexible electronics application

摘要

Ge is of great interest in MOSFET applications dueto its high carrier mobilities. Many issues have beensolved, and high mobility Ge MOSFETs have beenreported. [1,2] Another possible application ways ofGe are spintronics (spin-FET) and flexible electronics(high mobility TFT on polymer substrate). [3,4] Forsuch applications, a low temperature fabricationprocess is necessary because of the low thermalstability of spin-source/drain or polymer substrate.However, no one has focused fabrication of highquality Ge MOS at low temperature yet. In this study,we aim to investigate qualities of Ge MOS capacitors(CAPs) fabricated under low temperatures.