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Reliability issues on the 128M TSOP II 54L dual chip package

机译:128M TSOP II 54L双芯片封装的可靠性问题

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The ChipMOS proprietary package, TSOP II 54L Dual Chip 128M SDRAM, combines two 0.2#mu#m process dice in a single chip. Together with a BT based two-layer substrate for interconnections and Hitachi~(circle R) film provides the adhesive force. From the study it can be found that the bonding conditions between the film and substrate dominate the reliability of the package. However, the reliability is not only related to the adhesive material but also depends on the quality of the substrate. This paper indicates the techniques used for this package with the experiments applied on the subjects as (1) Taping on substrate, (2) Substrate warpage control, (3) Planarity taping, and (4) The related reliability improvements. The analyses made in order to support the decision-making are focused mainly on the substrate and film materials. All the efforts devoted on the package development have concluded a good outcome and the product is formally pass JEDEC Level III in reliability. Level III in reliability.
机译:ChipMOS专有封装TSOP II 54L双芯片128M SDRAM,在单个芯片中结合了两个0.2#μ#m工艺芯片。与基于BT的用于互连的两层基板以及日立(R圆形)膜一起提供粘合力。从研究中可以发现,薄膜和基材之间的粘合条件决定了包装的可靠性。但是,可靠性不仅与粘合材料有关,而且还取决于基板的质量。本文指出了用于此包装的技术,并在主题上进行了以下实验:(1)基材上的胶带粘贴;(2)基材翘曲控制;(3)平面胶带粘贴;以及(4)相关的可靠性改进。为了支持决策而进行的分析主要集中在基材和薄膜材料上。致力于封装开发的所有努力均取得了良好的结果,该产品的可靠性已正式通过JEDEC III级。可靠性达到III级。

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