High Frequency Power Metamorphic HEMT

摘要

By tailoring the device's material, geometry and processing, our device designers have fabricated a state-of-the-art high frequency Metamorphic HEMT device with a G_(max) of 12 dB, a power density of 360 mW/mm, and PAEs exceeding 30% at 95 GHz. This device had been utilized to create a range of W-band amplifiers with excellent performance, including a 266 mW PA operating at 90 GHz.