A Super Ruggedness InGaP/GaAs HBT for GSM Power Amplifiers

摘要

A 4W super ruggedness InGaP/GaAs HBT for GSM power amplifier applications is presented. With improved epi-structure, layout and process, the device can be survived at 25:1 VSWR. To our knowledge, this is the highest ruggedness achieved for a 4W InGaP/GaAs HBT. In addition, the device shows good power performance with typical 36 dBm output power, 18 dB linear gain and 64% PAE at 900 MHz and 35 dBm output power, 15 dB linear gain and 60% PAE at 1800 MHz, respectively. This device is excellent candidate for not only GSM but also DCS/PCS PA applications.