InGaP HBT Technology Optimization for Next Generation High Performance Cellular Handset Power Amplifiers

摘要

This paper reports on our new HBT technology developed for GSM, CDMA and WLAN PA application. The improvements are achieved by epitaxial, process and layout optimization. The device performance of the new technologies are presented and compared with our current available technology. The new device is able to survive VSWR 12:1 under 5V V_(CE) bias, and by tuning the power cell for maximum efficiency, we are able to achieve up to 67% PAE.