Shallow Mesa Isolation of AlSb/InAs HEMT with AlGaSb Buffer Layer Using Inductively Coupled Plasma Etching

摘要

A mesa isolation process of AlSb/InAs HEMT has been developed by using inductively coupled plasma etching. The etch rate is well controlled and the resulting mesa floor demonstrates a significant improvement in smoothness as compared to a wet-etched floor. Devices fabricated by this technique show a revolutionary RF performance of f_T =220 GHz and f_(max) = 275 GHz at 170 mW/mm for a 0.1-μm gate.