首页>
外国专利>
Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs
Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs
展开▼
机译:通孔兼容的InAs / AlGaSb HEMT的外延成核和缓冲序列
展开▼
页面导航
摘要
著录项
相似文献
摘要
A metamorphic high electron mobility transistor having a plurality of high electron mobility transistor layers, a semi-insulating substrate, a ternary metamorphic buffer layer positioned between the semi-insulating substrate and the plurality of high electron mobility transistor layers, the ternary metamorphic buffer layer being Al1-xGaxSb such that x is greater than or equal to 0.2 but less than 0.3, a stabilizing layer positioned between the ternary metamorphic buffer layer and the plurality of high electron mobility transistor layers, the stabilizing layer being Al1-yGaySb such that y is greater than 0.2 but less than or equal to 0.3 and y is greater than x, and a nucleation layer interposed between the semi-insulating substrate and the ternary metamorphic buffer layer.
展开▼
机译:一种具有多个高电子迁移率晶体管层,半绝缘衬底,位于该半绝缘衬底与多个高电子迁移率晶体管层之间的三元变质缓冲层的变质高电子迁移率晶体管,该三元变质缓冲层为Al 1-x Sub> Ga x Sub> Sb,使得x大于或等于0.2但小于0.3,稳定层位于三元变质缓冲层和多个高电子迁移率晶体管层,稳定层为Al 1-y Sub> Ga y Sub> Sb,使得y大于0.2但小于或等于0.3且y大于x,和成核层,介于半绝缘基板和三元变质缓冲层之间。
展开▼