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Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs
Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs
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机译:通孔兼容的InAs / AlGaSb HEMT的外延成核和缓冲序列
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摘要
A high electron mobility transistor having a first and a second layer with a ternary metamorphic buffer between the first and second layers, the first layer composed of a first material and the second layer composed of a second material, the first and second material having different lattice constants.
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