Dry etching of magnesium oxide thin films by using inductively coupled plasma for buffer layer of MFIS structure

摘要

Magnesium oxide thin film has been widely used as a buffer layer and substrate for growing various thin film materials because of very low Gibbs free energy, low dielectric constant and low refractive index. The investigations of the MgO etching characteristics in BCl_3/Ar plasma were carried out using the inductively coupled plasma system. It was found that the increasing BCl_3 in the mixing ratio of BCl_3/Ar plasma causes monotonic MgO etch rate. The results showed in the BCl_3-rich plasma that the etching process is dominantly supplied by the chemical pathway through the ion-assisted chemical reaction.