The prospects of design for Roll to Roll lithography: Layout refinement utilizing process simulation

摘要

Technologies for pattern fabrication using imprint process are being developed for various devices. Roll to roll lithography is attractive candidate for extremely low-cost fabrication of large-area devices in large volumes. To apply smaller pattern size device, layout dependent hotspots becomes a significant issue, so design for manufacturing (DFM) flow considering imprint process has to be prepared. In this paper, resist spread, stress distribution on pattern and mold, resist shrinkage through UV cure are extracted as targets of layout compensation, and various imprinting simulation utilizing stress model and fluid model are verified. DFM flow to prepare imprint friendly design, and to apply imprint proximity correction (iPC) is proposed.