The lithographic impact of resist model parameters

摘要

The resist models in PROLITH are designed to be a mechanistic description of the resist chemistry and physics of optical lithography. This is especially true for the expose and post-exposure bake processes, where the resist chemistry can be mapped almost directly to the input parameters in the PROLITH models. In this study, we review the models in PROLITH and show how different chemistry parameters, such as the quantum yield and the reaction kinetics during PEB, can be translated into resist model parameters. With this "chemist to simulator" translator, we show how the models can be used to better understand how resist formulation impacts resist response. Specifically, we will show how quencher loading, and acid and quencher diffusivities impact depth of focus for isolated and dense features.