Robust and environmentally stable deep UV positive resist: optimization of SUCCESS ST2

摘要

Abstract: By optimization of SUCCESS ST2 an environmentallystable and robust deep UV positive resist has beenderived where the generally encountered problemsrelated to chemical amplification resists, theformation of T-tops and linewidth changes during delayhave been solved. The previously reported chemistry,protected poly-p-hydroxystyrene and SUCCESS typesulfonium salts, has been proven to be insensitive toairborne contaminations. In this paper the optimizationof processing conditions, based on thermal analysis isreported. With the derived conditions linewidth changesduring delays could be minimized and excellentperformance obtained. At the IBM lithography testcenter in Boblingen an integrated photosector,consisting of equipment, materials, process and controlphilosophy, was balanced and 0.25 $mu@m pattern canroutinely be resolved using an ASM-L DUV stepper (NA0.5). !12