Styrene monomers with 2,2-bis-tri:fluoro-methyl-oxy:ethano bridging gps. - useful for prodn. of polymeric binders for radiation-sensitive, positive and negative deep-UV resists

摘要

Cpds. of formula (I) are new, where R1 = acid-cleavable gp.; R2 = H or opt. halo-substd. 1-4C alkyl; R3-R6 = H, halo, or opt. halo-substd. 1-20C aliphatic, 6-14C aromatic or 7-20C araliphatic gp. Also claimed are polymers (II) contg. at least 10 mole percent units derived from (I). Also claimed are radiation-sensitive mixts. (II) contg. polymer binders with acid-cleavable side-gps. (II) and cpds. (IV) which produce strong acid on irradiation. Pref. R1 - tri(1-4C alkyl)-methyl, di(1-4C alkyl)-(6-10C aryl)-methyl, benzyl, tri(1-20C alkyl)-silanyl, (1-20C alkoxy)carbonyl, tetrahydropyranyl or tetrahydrofuryl, pref. tert.-butoxycarbonyl, iso-propoxycarbonyl, pentyloxycarbonyl, trimethylsilanyl, tert.-butyl or 1-methyl-1-1-phenylethyl, esp. pref. tert.-butoxycarbonyl, pref. in the para position w.r.t. -CR2=CH2; R2 = H or Me and R3-R6 = H. USE/ADVANTAGE - Used for the prodn. of positive and negative, ''chemically-reinforced'' deep-UV resists with good etching resistance, transparency, hydrophilic/hydrophobic balance and adhesion properties (cf. prior-art poly-(4-hydroxystyrene) and novolaks); (II) are easily prepd. from inexpensive bulk chemicals. The claims also include (a) a recording material with a substrate and a radiation-sensitive layer of (III), anbd (b) a process for producing relief structures or for structuring semiconductor wafers, by applying mixt. (III) to a conventionally pretreated substrate, drying to give a 0.1-5 micron layer, irradiating to produce an image, opt. heating to temps. up to 150 deg.C and then treating with aq. alkaline solvent to form a positive image or with organic solvent to form a negative image.