Polysilyne resists for 193 nm excimer laser lithography

摘要

Abstract: Polyalkylsilynes have been used as resists for 193-nm projection lithography. These resists can be either wet developed using toluene or dry developed using HBr reactive ion etching (RIE). Wet development relies on crosslinking via intermolecular Si-O-Si bond formation to reduce solubility (negative tone) whereas the dry development relies on photo-oxidation to induce etch selectivity (also negative tone). The sensitivity in either case ranges from 20 to 200 mJ/cm$+2$/ and depends on the resist formulation. The best resist compositions are those that contain predominantly small (n-butyl) aliphatic pendant groups rather than large (cyclohexyl, phenyl) pendant groups. Using a 0.33 NA catadioptric lens with a phase mask, equal line-and-space features as small as 0.15 $mu@m have been printed and transferred through 1.0 $mu@m of planarizing layer (aspect ratio $GRT 6) using oxygen RIE.!