Root Cause Analysis and Elimination of NPN E-B Leakage Yield Loss in a SiGe BiCMOS Technology

机译：SiGe BiCMOS技术中产生NPN E-B漏电流的根本原因分析和消除

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New process solutions were developed to overcome yield loss due to process margin issue, coming from enhanced Emitter Base leakage in a mixed-signal BiCMOS technology. This paper presents failure analysis in a band gap reference circuit malfunction, in a

机译：开发了新的工艺解决方案来克服由于工艺裕量问题而导致的良率损失，这种工艺问题来自于混合信号BiCMOS技术中增强的发射极基极泄漏。本文介绍了带隙基准电路故障中的故障分析。

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来源
《Advanced Semiconductor Manufacturing Conference, 2007 IEEE/SEMI》|2007年|P.206-208|共3页
会议地点 StresaItaly
作者
Raghavan; V.; Ng; B.; Singh; R.; Tan Boon Lay;
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BiCMOS integrated circuits; Ge-Si alloys; extrusion; failure analysis; integrated circuit yield; mixed analogue-digital integrated circuits; transmission electron microscopy; tungsten; NPN E-B leakage yield loss; SiGe; W; band gap reference circuit malfunction; cont;

机译：BiCMOS集成电路；锗硅合金;挤压;故障分析;集成电路成品率；混合模数集成电路；透射电子显微镜钨NPN E-B泄漏产量损失；硅锗; W;带隙参考电路故障；续;

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1. On the Transient Response of a Complementary (npn src="/images/tex/515.gif" alt="+"> pnp) SiGe HBT BiCMOS Technology [J] . Lourenco N.E., Fleetwood Z.E., Jung S., Nuclear Science, IEEE Transactions on . 2014,第6期

机译：关于互补（npn src =“ / images / tex / 515.gif” alt =“ +”> pnp）的瞬态响应SiGe HBT BiCMOS技术
2. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology [J] . Guofu Niu, Mathew S.J. IEEE Transactions on Nuclear Science . 1999,第6期

机译：0.35 / spl mu / m SiGe BiCMOS技术中的总剂量对浅沟槽隔离漏电流特性的影响
3. Low-Loss DC-100 GHz Suspended Microstrip Lines on Micromachined SiGe BiCMOS BEOL Technology [J] . R. De Paolis, M. Kaynak, F. Coccetti IEEE microwave and wireless components letters . 2016,第4期

机译：采用微机械SiGe BiCMOS BEOL技术的低损耗DC-100 GHz悬浮微带线
4. Root Cause Analysis and Elimination of NPN E-B Leakage Yield Loss in a SiGe BiCMOS Technology [C] . Raghavan, Venkat, Ng, . 2007

机译：SiGe BiCMOS技术中产生NPN E-B漏电流的根本原因分析和消除
5. High-Speed SAR ADC Design in SIGE BiCMOS Technology [D] . Hermansen, Peter. 2019

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6. Vision Amniotic Leak Detector (ALD) to Eliminate Amniotic Fluid Leakage as a Cause of Vaginal Wetness in Pregnancy: A NICE Medical Technology Guidance [O] . A. F. Ray, S. C. Peirce, A. R. Wilkes, -1

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7. SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems [O] . Thomas Zimmer, Josef Bock, Fred Buchali, 2021

机译：SIGE HBTS和BICMOS技术的现有和未来毫米波系统

Root Cause Analysis and Elimination of NPN E-B Leakage Yield Loss in a SiGe BiCMOS Technology

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