Novel Thermally-Stable Hafnium and Zirconium ALD Precursors

摘要

Atomic Layer Deposition (ALD) of Hf and Zr oxide films is of considerable interest and promise for future generation Metal-lnsulator-Metal (MIM) structures in memory applications. Hafnium and zirconium alkylamides such as tetrakis(ethylmethylamino) hafniu