Materials development for PhotoINhibited Super Resolution (PINSR) lithography

摘要

Progress in materials for radical initiated, radical inhibited superresolution lithography is reported. The photochemistry and optical system is described, with a brief discussion on the theory of operation. A motivation is presented for developing a new material that may be used as a spinnable photoresist, and qualitative resist requirements are discussed. Results from FTIR experiments suggest how viscosity and monomer type may affect resist performance. Finally, focused beam photoinhibition experiments on a novel photoresist are presented.