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Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing

机译:硅晶体生长和晶圆加工的正交缺陷解决方案

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摘要

The silicon industry is a maturing one. Mature industries have, or should have, different concerns than young industries. One of the features which characterized the silicon industry in its youth is that of defect engineering. Defect issues such as the control of oxygen precipitation and intrinsic point defect related micro-defects have been at the centre of this enterprise for many years. These are very difficult and complex problems from both a scientific and an engineering point of view. They are, importantly, highly coupled problems. Because of the complexity inherent in some of these problems, more often than not solutions to issues presented by such problems have produced rather highly tuned measures specific to certain applications. It has also produced armies of application engineers and commodity teams whose job is, among other things, to manage this complexity and the problems of material specification in such an environment. But this is not the way a mature industry behaves. For a variety of reasons, a mature industry strives for solutions which are as generic as possible; a mature industry strives to reduce the inherent costs of highly engineered specific solutions. A mature industry tries, where possible, to sidestep complexity; a mature industry strives for solutions to specific problems which are orthogonal to the solutions for other problems. In other words, it needs solutions which cannot create problems elsewhere in the complex environment in which it operates. We have by no means yet reached full orthogonality of defect solutions for silicon, but we approaching it. And indeed some of the issues with silicon wafers simply do not lend themselves to such principles of orthogonality. But we must strive to apply them where they arc possible. This paper discusses two such orthogonal solutions to the immensely important problems of oxygen precipitation and micro-defect control in silicon wafers: the Magic Denuded Zone~(~R) (MDZ~(~R)) and Perfect Silicon.
机译:硅产业是一个日趋成熟的产业。成熟产业与年轻产业相比有或应该有不同的关注点。硅产业年轻时的特征之一就是《缺陷工程》。多年来,诸如氧析出控制和与固有点缺陷有关的微缺陷之类的缺陷问题一直是该企业的中心。从科学和工程的观点来看,这些都是非常困难和复杂的问题。重要的是,它们是高度耦合的问题。由于这些问题中某些问题固有的复杂性,解决此类问题所提出的问题的解决方案通常会针对某些应用程序产生高度调整的措施。它还产生了许多应用工程师和商品团队,其职责是在这种环境下管理这种复杂性和材料规格问题。但这不是成熟行业的行为方式。由于各种原因,一个成熟的行业正在努力寻求尽可能通用的解决方案。一个成熟的行业致力于降低高度设计的特定解决方案的固有成本。一个成熟的行业试图在可能的情况下避免复杂性。一个成熟的行业致力于解决与其他问题的解决方案正交的特定问题的解决方案。换句话说,它需要在其运行的复杂环境中无法在其他地方产生问题的解决方案。我们还没有完全达到硅的缺陷解决方案的“正交性”,但是我们正在接近它。实际上,硅晶片的某些问题根本不适合于这种正交性原则。但是我们必须努力将它们应用到可能的地方。本文讨论了两个这样的正交解决方案,它们解决了硅片中氧沉淀和微缺陷控制这一极为重要的问题:魔术剥蚀区(〜R)(MDZ〜(〜R))和完美硅。

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