首页> 外国专利> Method for pretreatment of silicon sample, method for evaluating metal contamination of silicon sample, method for evaluating single crystal silicon ingot growth process, method for producing single crystal silicon ingot and method for manufacturing silicon wafer

Method for pretreatment of silicon sample, method for evaluating metal contamination of silicon sample, method for evaluating single crystal silicon ingot growth process, method for producing single crystal silicon ingot and method for manufacturing silicon wafer

机译:硅样品预处理的方法,评价硅样品的金属污染的方法,用于评估单晶硅锭生长过程的方法,生产单晶硅锭的方法及制造硅晶片的方法

摘要

Problem to be solved: to provide a new pretreatment method for silicon samples before evaluation of metal contamination.The silicon sample before the metal contamination evaluation is acid etched by an etching liquid containing hydrogen fluoride and nitric acid, and the silicon sample after the acid etching is SC1 washed by the SC1 cleaning liquid having a liquid temperature of 80 ° C. or less A pretreatment method of a silicon sample in which the metal contamination including the acid washing of the silicon sample is performed.No selection
机译:要解决的问题:在评估金属污染之前,为硅样品提供新的预处理方法。在金属污染评价之前是含有氟化氢和硝酸的蚀刻液的酸蚀刻,并且在酸蚀刻之后的硅样品由SC1清洁液洗涤,液体温度为80℃或更低进行硅样品的预处理方法,其中进行包括硅样品的酸洗涤的金属污染。没有选择

著录项

  • 公开/公告号JP2021040082A

    专利类型

  • 公开/公告日2021-03-11

    原文格式PDF

  • 申请/专利权人 株式会社SUMCO;

    申请/专利号JP20190161793

  • 发明设计人 加藤 宏和;

    申请日2019-09-05

  • 分类号H01L21/66;C30B29/06;

  • 国家 JP

  • 入库时间 2022-08-24 17:40:00

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