Void Shrinkage during Thermal Oxidation of Silicon

摘要

The shrinkage of voids created by He implants in silicon has been measured during thermal oxidation. The empty volume is filled by self-interstitials injected during oxidation. The increase in volume is proportional to the oxide thickness and follows the same time dependence. The captured interstitials surface density range between 10~(15) - 10~(16) cm~(-2). The amount of captured interstitials for a given oxide thickness is temperature independent above 1050℃, but below it decreases indicating the presence of competing defect centres for the trapping of interstitials.