Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals

摘要

An in depth evaluation of internal gettering effectiveness in Si wafers has been run based on iron and nickel intentional contamination followed by minority carrier recombination centers measurements. The paper demonstrates the relevance of oxygen clusters density and stability as well as thermal treatment cooling phase conditions on gettering mechanism activation. A theoretical model is proposed taking into account both homogeneous and heterogeneous nucleation of metals at oxygen clusters and surface sites.