Hydrostatic Pressure Effect on the Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon

摘要

Redistribution of oxygen atoms and creation of defects in oxygen - implanted silicon (Si:O, oxygen dose up to 6x10~(17)cm~(-2), energy up to 200 keV), subjected to treatment at high temperature, HT (up to 1570 K) - high hydrostatic pressure, HP (up to 1.5 GPa), are investigated. The treatment of Si:O at ≤ 1230 K - 1 GPa does not affect markedly the oxygen distribution profiles; at ≥ 1400 K it results in the HP - dependent decrease of oxygen content and in the change of oxygen profile shape while creation of dislocations is suppressed. The treatment induced effects in Si:O are related to HP - stimulated oxygen clustering (creation of sub - stoichiometric SiO_(2-x)), to decreased oxygen diffusion rate and to altered misfit at the SiO_(2-x) / Si matrix boundary.