Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:Oud prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) wasud investigated after annealing of Si:O at temperatures up to 1570 K, including alsoud processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processingud conditions, buried layers containing SiO₂₋x clusters and/or precipitates were formed. Toud produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RFud hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen wasud accumulated in sub-surface region as well as within implantation-disturbed areas. It hasud been found that hydrogen was still present in Si:O,H structures formed by oxygenud implantation with the dose D = 10⁷ cm⁻² even after post-implantation annealing up toud 873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O asud well as in SOI structures can be used for recognition of defects.
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