Crystallization Study of the Cu_2ZnSnS_4 Chalcogenide Material for Solar Applications

摘要

Cu_2ZnSnS_4 thin films were first deposited by RF magnetron sputtering at room temperature from a single quaternary target on molybdenum coated substrates. The films were annealed in a rapid thermal processor at 480, 500 and 520 degrees Celsius and for annealing times ranging from 2 minutes to 40 minutes. The annealing was done without any toxic gases or reactive sulphur. The compositional and structural properties of the films were analysed using EDX and XRD respectively and certain recipes were identified which produce films with good adhesion, good crystallinity and that show the ideal stoichiometry before and after annealing. Furthermore an in depth analysis of the phases formed was realized during the experiment.