首页> 外文会议>8th European Magnetic Materials and Applications Conference, Jun 7-10, 2000, Kyiv, Ukraine >The Role of Impurity States in Garnet Magnetic Semiconductor Films
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The Role of Impurity States in Garnet Magnetic Semiconductor Films

机译:杂质态在石榴石磁性半导体薄膜中的作用

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The experiments of the electrical conductivity on the different frequencies and magnetoresistance effect were performed on Si- substituted Y_3Fe_5O_(12) films. Nonlinear V-I― characteristics wereobserved. Effects of impurity states Si~(4+) + (Fe~(3+) <-> Fe~(2+)) on the magnetic and electrical properties of garnet magnetic semiconductors are analyzed.
机译:在硅取代的Y_3Fe_5O_(12)薄膜上进行了不同频率下的电导率和磁阻效应的实验。观察到非线性V-I-特性。分析了杂质态Si〜(4+)+(Fe〜(3+)<-> Fe〜(2+))对石榴石磁性半导体的电磁性能的影响。

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