Sulfur vacancies degrade interface at valence band side in MoS_2 FET

摘要

Although stable p-type 2D-FET is required forcomplementary transistor operation, the transistorperformance of defect-related p-type 2D channels,such as WSe_2, SnS_2 and so on, is generally low, comparedwith widely studied n-type MoS_2 FET.Here, Nb doped p-type MoS_2 crystals are availablenow. In this study, we study the hole transport ofNb-doped MoS_2 FET in order to reveal the interfacestates (Dit) at valance band (VB) side.