Influence of Au Overlayers on Valence-Band Offsets for Buried CaF2/Si(111) Interfaces. (Reannouncement with New Availability Information).

摘要

The growth of epitaxial calcium fluoride films on Si has attracted a great deal of attention because this system serves as a prototype for ionic insulator covalent semiconductor interfaces and because it shows promise for applications in three-dimensional electronic devices. Various interface structural models have been proposed based on electron microscopy, ion channeling and backscattering, and photoelectron spectroscopy. In this paper we present a high resolution x ray photoemission study of the electronic structure of Au/CaF2/p-type Si(111). The offset for the CaF2/Si heterojunction varies with annealing temperature from 7,0 eV at 20 C to 7.7 eV at 700 C to 7.9 eV at 800 C, and Au deposition alters the electrical properties at the buried CaF2/Si interface by reducing the offset to 6.2, 6.8, and 7.0 eV, respectively.