Dynamic global modeling of the oxygen segregation during the pulling process of Czochralski silicon crystal growth

摘要

Transient global modeling of the Czochralski silicon (CZ-Si) crystal growth process has long been proposed for understanding the dynamic behaviors of the heat and mass transport in the crystallization set-up. Furthermore, segregations of impurities and dopants could also be predicted dynamically by the transient global simulation. However, most of the transient global simulations for CZ-Si crystal growth neglected the melt flow and mass transport due to the complexity of the convection modeling.