Characterization and Production Metrology of Thin Transistor Gate Dielectric Films

摘要

We report use of spectroscopic ellipsometry (SE) to meet thickness and material composition characterization requirements for current and future production gate dielectrics. We determine optical dispersion for zirconium dioxide high k dielectric, material composition at an interface beneath the zirconium dioxide, and discuss related issues. We also report the development of optical models which extract nitrogen content in thin oxynitride gates.