首页> 外文会议>5th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS), 5th, Sep 18-20, 2000, Ostend, Belgium >Materials Compatibility and Organic Build-Up during Ozone-Based Cleaning of Semiconductor Devices
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Materials Compatibility and Organic Build-Up during Ozone-Based Cleaning of Semiconductor Devices

机译:半导体器件基于臭氧的清洁过程中的材料相容性和有机堆积

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摘要

The pH of deionized water (DI-water) was found to decrease when ozone was bubbled through the solution. This phenomenon was investigated by monitoring the change in chemical composition of the ozonated solution by means of Ion Chromatography (IC). It was found that nitrate, sulfate, formiate, acetate and oxalate ions were generated in the DI-water whereby these organic acids are responsible for the pH-decrease. These species are reaction products of the gas phase reaction between ozone and the Teflon tubing connecting the ozone generator to the reaction vessel.
机译:当臭氧鼓泡通过溶液时,发现去离子水(去离子水)的pH值降低。通过离子色谱法(IC)监测臭氧化溶液的化学成分变化,研究了这种现象。已发现在去离子水中生成了硝酸根,硫酸根,甲酸根,乙酸根和草酸根离子,这些有机酸可导致pH值降低。这些物质是臭氧与将臭氧发生器连接到反应容器的特氟隆管之间的气相反应的反应产物。

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