Layer-By-Layer Oxidation of Silicon

摘要

The layer-by-layer oxidation reaction occurs at the interface as a result of periodic changes in bonding nature of Si crystal at the interface. The layer-by-layer oxidation reaction are reflected in the morphology of oxide surface, distribution of interface states in silicon bandgap, valence band discontinuity at SiO_2/Si interface, chemical shift of Si 2p spectrum for silicon oxide from that for bulk Si, and oxidation rate.