Contamination and Cleaning of Oxide Areas Exposed During Copper CMP in Hydroxylamine Based Slurries

摘要

Copper contamination of oxide areas that may occur during the chemical mechanical planarization of copper based structures using hydroxylamiane based slurries has been investigated. The results indicate low levels of copper contamination that is easily removable using a DI water brush cleaning technique. A mechanism for copper contamination has been proposed through the construction of potential-pH diagrams.