Self Interstitials, Vacancies and Oxygen Atoms in CZ Silicon

摘要

To understand the formation mechanisms of grown-in defects in CZ silicon, it is fundamentally indispensable to investigate behavior of self-interstitials, vacancies and oxygen atoms in the crystal. However, such a system to simultaneously analyze their behavior has not been reported. Assuming complexes composed of an oxygen atom and a vacancy, which are different from the well-known A-centers, a system of three diffusion equations for these native defects and oxygen atoms is presented. Approximate solutions of the system are discussed.