Based on the analysis of the secondary processes of radiation-induced defect formation in Si crystals with charge-dependent selective traps for vacancies and interstitial atoms, the energy levels of vacancies and interstitial atoms were identified; these level were determined previously from the effect of the irradiation conditions on the annihilation rate of elementary primary defects. It is ascertained that the levels at ～E_c - 0.28 eV and at ～E_c - 0.65 eV in the band gap of Si belong, most likely, to vacancies; the levels at ～E_c - 0.44 eV, at ～E_c - 0.86 eV, and, presumably, at ～E_c - 0.67 eV belong to intrinsic interstitial atoms.
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