Hybrid Impurity and Self-Diffusion in GaAs and Related Compounds: Recent Progress

摘要

This contribution highlights several outstanding results concerning atomic diffusion in III-V semiconductors. We focus on the technologically important binary compounds that are based on Ga as group-III component. Recent progress in this field of research was obtained from self-atom and hybrid impurity diffusion studies using sophisticated experimental methods. In particular, it is shown for GaAs how the mutual comparison of the resulting two sets of data have provided pertinent information about sublattice-specific diffusion mechanisms and the native point defects involved therein.