Impurity and Defect Characterization in Epitaxial GaAs, InP, and the Ternary and Quaternary Compound Semiconductors

摘要

Experimental techniques were developed and used for the unambiguous identification of donors in high-purity epitaxial GaAs, InP and related compounds. Magnetic fields up to 20 T and high-resolution submillimeter spectroscopy were used to distinguish the Zeeman transitions 1s 2p(m=1) of each different donor and to describe the dependence of the line shape on field intensity. Transmutation doping was used to distinguish Se and Ge donors, molecular beam epitaxy to distinguish Sn. These methods were extended to InGaAs near millimeter wavelengths. Finally, the magnetic field dependence of the spin doublet in GaAs was measured.