首页> 外文会议>42nd international symposium on microelectronics (IMAPS 2009) >Crystallographic Texture and Whisker Growth in Electroplated Sn and Sn-Alloy Films
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Crystallographic Texture and Whisker Growth in Electroplated Sn and Sn-Alloy Films

机译:电镀锡和锡合金膜的晶体结构和晶须生长

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摘要

Tin whisker growth poses a continued reliability concern for Pb-free electronic systems. The fundamentalrnmechanisms behind the spontaneous growth of these metallic filaments are not well understood and a greaterrnunderstanding is required to develop mitigation strategies. Published data shows that variations of plating processrnparameters can produce electroplated films with clearly different crystallographic textures, and for electroplated Snrnand Sn-alloy films changes in crystallographic texture may lead to different rates of whisker growth.rnIn this work, the relationship between materials, processing parameters, crystallographic texture, andrnwhisker propensity is examined. Four electrolyte compositions were used to electroplate Sn and Sn alloy films withrndifferent compositions and microstructures on phosphor bronze and pure Cu substrates. Pole figures and inversernpole figures created using x-ray diffraction were used to determine the quantitative crystallographic texture of filmsrnas a function of processing parameters such as current density. The tendency for these films to form whiskers orrnother surface defects was categorized by surface defect density and type. The relationship between film texture, filmrncomposition, and whisker formation is presented. These data suggest that while the optimal crystallographic texturernis not yet known, it may be possible to use x-ray texture data as a guideline for controlling and monitoring platingrnprocesses to reduce the tendency of films to form whiskers.
机译:锡晶须的增长一直困扰着无铅电子系统的可靠性。这些金属丝的自发生长背后的基本机理尚未得到很好的理解,并且需要更大的了解来制定缓解策略。公开的数据表明,电镀工艺参数的变化可以产生具有明显不同晶体学纹理的电镀膜,而对于电镀Snrn和Sn合金膜,晶体学纹理的变化可能导致晶须生长速率不同.rn在这项工作中,材料,工艺参数之间的关系,晶体学纹理和晶须倾向被检查。四种电解质成分被用来在磷青铜和纯铜衬底上电镀具有不同组成和微观结构的锡和锡合金膜。使用X射线衍射创建的极图和反极图用于确定胶片的定量晶体学纹理,该纹理是诸如电流密度之类的处理参数的函数。这些膜形成晶须或其他表面缺陷的趋势按表面缺陷密度和类型分类。提出了膜质地,膜组成和晶须形成之间的关系。这些数据表明,虽然尚不知道最佳的结晶织构,但可以使用X射线织构数据作为控制和监视电镀过程以减少薄膜形成晶须趋势的准则。

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  • 来源
  • 会议地点 San Jose CA(US);San Jose CA(US)
  • 作者单位

    School of Materials Engineering Purdue University, West Lafayette, IN 47906 Email: aepedigo@purdue.edu;

    rnSchool of Materials Engineering Purdue University, West Lafayette, IN 47906;

    rnSchool of Materials Engineering Purdue University, West Lafayette, IN 47906;

    rnSchool of Materials Engineering Purdue University, West Lafayette, IN 47906 Component Quality and Technology Cisco Systems, Inc. Email: pensu@cisco.com;

    rnSchool of Materials Engineering Purdue University, West Lafayette, IN 47906;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路(IC) ;
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