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Evaluation of fine grain 3-D integrated arithmetic units

机译:细颗粒3D集成算术单元的评估

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Three dimensional (3-D) technologies have come under the spotlight to overcome limitations of conventional two dimensional (2-D) microprocessor implementations. However, the effect of 3-D integration with vertical interconnects in arithmetic units design is not well discussed yet. In this paper, aiming at clarifying the effectiveness of the 3-D integrated technology in arithmetic units design, fine grain 3-D integrated arithmetic units that aggressively employ vertical interconnects are designed and evaluated. This paper also presents a design strategy for 3-D integrated arithmetic units, which partitions a circuit into sub-circuits to fully exploit the benefit of 3-D technologies. The simulation results using practical through-silicon-vias (TSVs) show that the fine grain 3-D integrated arithmetic units with the proposed circuit partitioning policy have a potential to improve the performance of the future arithmetic units.
机译:三维(3-D)技术已经成为人们关注的焦点,以克服常规二维(2-D)微处理器实现的局限性。但是,在算术单元设计中将3D与垂直互连集成的效果尚未得到很好的讨论。在本文中,为了阐明3-D集成技术在算术单元设计中的有效性,设计并评估了积极采用垂直互连的细颗粒3-D集成算术单元。本文还提出了3-D集成算术单元的设计策略,该策略将电路划分为子电路,以充分利用3-D技术的优势。使用实际的硅通孔(TSV)进行的仿真结果表明,采用拟议的电路划分策略的细颗粒3-D集成算术单元具有改善未来算术单元性能的潜力。

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