首页> 外文会议>3D System Integration, 2009. 3DIC 2009 >Validation of the porous-medium approach to model interlayer-cooled 3D-chip stacks
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Validation of the porous-medium approach to model interlayer-cooled 3D-chip stacks

机译:多孔介质方法对层间冷却3D芯片堆叠建模的验证

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Interlayer cooling is the only heat removal concept which scales with the number of active tiers in a vertically integrated chip stack. In this work, we numerically and experimentally characterize the performance of a three tier chip stack with a footprint of 1cm2. The implementation of 100µm pitch area array interconnect compatible heat transfer structures results in a maximal junction temperature increase of 54.7K at 1bar pressure drop with water as coolant for 250W/cm2 hot-spot and 50W/cm2 background heat flux. The total power removed was 390W which corresponds to a 3.9kW/cm3 volumetric heat flow.
机译:层间冷却是唯一一个与垂直集成芯片堆栈中的活动层数成比例的散热概念。在这项工作中,我们在数值上和实验上表征了占地1cm 2 的三层芯片堆栈的性能。采用100μm节距阵列互连兼容的传热结构,在水压为250W / cm 2 和50W / cm < sup> 2 背景热通量。去除的总功率为390W,相当于3.9kW / cm 3 体积热流。

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