Influence of 3D integration on 2D interconnections and 2D self inductors HF properties

摘要

In this study, effects due to 3D level stack on HF properties of 2D interconnections and 2D self inductors integrated in the Back End Of Line (BEOL) are investigated. Self-inductors are considered as self coupled interconnects around a long loop where the magnetic field is confined. So, simple and coupled 2D interconnections of BEOL are studied in order to determine the influence of the silicon substrate stack on propagation delay, crosstalk and factor quality of 2D interconnects and self-inductors.