Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance

摘要

This paper describes low on-resistance lateral trench gate super-junction LDMOSFETs on SOL The specific on-resistance (R_(sp)) of the SOI-LDMOSFETs is effectively improved by the super-junction concept together with the lateral trench gate. The super-junction helps to increase the doping concentration of the n-drift layer, and the lateral trench gate allow to increase the channel area. It can be achieved to reduce the on-resistance both of the n-drift and channel regions, respectively. Using the three-dimensional numerical simulator MINIMOS-NT, we confirm that the R_(sp) of the proposed lateral trench gate super-junction SOI-LDMOSFETs is about 60% of conventional SOI-LDMOSFETs. With the larger n column width than that of the p column the doping in the drift region can be reduced to 70% of the value of standard super-junction devices without degrading the on-resistance. As a result the sensitivity of the breakdown voltage to the charge imbalance can he improved in the proposed device.