首页> 外文会议>26th International Conference on the Physics of Semiconductors Jul 29-Aug 2, 2002 Edinburgh, UK >Remarkable coincidence between the steps of themagneto-luminescence energy and the plateaus of theQuantum Hall Effect in modulation-doped GaAs/GaAlAsquantum wells
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Remarkable coincidence between the steps of themagneto-luminescence energy and the plateaus of theQuantum Hall Effect in modulation-doped GaAs/GaAlAsquantum wells

机译:在调制掺杂的GaAs / GaAlAs量子阱中,磁致发光能量的阶跃与量子霍尔效应的平台之间的显着一致性

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Photoluminescence (PL) experiments were carried out on asymmetric modulationrndoped GaAs/Ga0.67Al0.33As single quantum wells (QW) in order to elucidate the origin ofrnnonlinear behavior of interband optical energies as functions of an external magnetic fieldrnB. The Quantum Hall Effect (QHE) was measured on the same samples under illumination.rnA remarkable coincidence was found between the nonlinearities of PL energies and onsetsrnof the quantum Hall plateaus. The PL experiments were also carried out on asymmetricrnQWs having the same 2D electron density but different widths. These experimental data arerndiscussed using two models: 1) The standard explanation of nonlinearities as resulting fromrnthe screened exchange and correlation effects in electron and hole 2D subbands; 2) A modelrnin which the nonlinearities are caused by an oscillatory change of 2D electron density Nu000b inrnthe QW as a function of B. It is found that the model of screened exchange and correlationrnis in contradiction with our experiments on QWs of different widths. On the basis of ourrnresults, as well as those of other authors, we conclude that it is the oscillatory behavior of thernelectron density Nu000b (B) in the QW that provides adequate description of the existing data onrnthe nonlinearities of the PL energies.
机译:为了阐明带间光能随外部磁场rnB的非线性行为的起源,对不对称调制掺杂的GaAs / Ga0.67Al0.33As单量子阱(QW)进行了光致发光(PL)实验。在相同样品的光照下测量了量子霍尔效应(QHE)。rn在PL能量的非线性与量子霍尔高原的开始之间发现了明显的重合。 PL实验也在具有相同二维电子密度但宽度不同的不对称rnQW上进行。这些实验数据使用两种模型进行讨论:1)对电子和空穴2D子带中屏蔽的交换和相关效应产生的非线性的标准解释; 2)一个模型,其中非线性是由QW随B的二维电子密度Nu000b的振荡变化引起的。发现交换和相关性的模型与我们对不同宽度的QW的实验相矛盾。根据我们的研究结果以及其他作者的研究结果,我们得出结论,正是QW中电子密度Nu000b(B)的振荡行为提供了关于PL能量非线性的现有数据的充分描述。

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  • 会议地点 Edinburgh(GB);Edinburgh(GB)
  • 作者单位

    Groupe d’Etude des Semiconducteurs, UMR CNRS 5650, Université Montpellier II, 34095rnMontpellier cedex France;

    Groupe d’Etude des Semiconducteurs, UMR CNRS 5650, Université Montpellier II, 34095rnMontpellier cedex France;

    Groupe d’Etude des Semiconducteurs, UMR CNRS 5650, Université Montpellier II, 34095rnMontpellier cedex France;

    Groupe d’Etude des Semiconducteurs, UMR CNRS 5650, Université Montpellier II, 34095rnMontpellier cedex France;

    Groupe d’Etude des Semiconducteurs, UMR CNRS 5650, Université Montpellier II, 34095rnMontpellier cedex France;

    Institute of Physics, Polish Academy of Sciences, 02668 Warsaw Poland;

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  • 正文语种 eng
  • 中图分类 材料;
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