Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu, Taiwan, 30010, ROC;
OptMic Lab, 340 S. Lemon Ave. #8365, Walnut, CA, 91798, USA;
Atom SemiconTek Co., Ltd., B35 1A2. No.1. Lising 1st Rd.,East Dist., Hsinchu, 30078, Taiwan;
Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan;
Department of Electrical, Computer and Energy Engineering, University of Colorado, Boulder, CO, USA;
Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu, Taiwan, 30010, ROC;
Substrates; Hafnium compounds; Atomic layer deposition; Photonic band gap; Refractive index; Plasma temperature;
机译:通过Ge衬底上原子层沉积的HfO2膜的H2S预沉积退火进行高质量的界面硫钝化
机译:通过基于三甲基铝的原子层沉积在In_xGa_(1-x)As衬底(x = 0、0.15、0.53)上生长的Al:HfO2的相稳定
机译:通过原子层沉积在氮化Ge(100)衬底上生长的HfO2的界面特性
机译:柔软光致抗蚀剂衬底上的HFO2低温原子层沉积的研制
机译:通过原子层沉积制备银催化剂以及使用Operando表面增强拉曼光谱研究原子层沉积反应。
机译:HtO2 / TiO2 / HfO2三层结构RRAM器件在原子层沉积制备的Pt和TiN涂层衬底上的双极电阻转换特性
机译:柔软光致抗蚀剂衬底上的HFO2低温原子层沉积的研制
机译:在Inp< 001>上的低温mBE生长的Inalas层的TEm结构研究。基质